TPCA8109 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOSⅥ)

TPCA8109
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPCA8109
Lithium Ion Battery Applications
Power Management Switch Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 7 mΩ (typ.)
• Low leakage current: I_DSS = −10 μA (max) (V_DS = −30 V)
• Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −0.5mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25°C)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
T_ch
T_stg
−30
V
−30
V
−25/+20
V
−24
A
−72
30
W
2.8
W
1.6
W
75
mJ
−24
A
150
°C
−55 to 150
°C
Note: For Notes 1 to 3, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
0.15 ± 0.05
4
0.595
1
A
5.0 ± 0.2
0.05 S
S
1
4
4.25 ± 0.2
8
5
1,2,3：SOURCE
4：GATE
5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8765
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1
2009-12-03