TPCA8106 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPCA8106
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±20 V, V_DS = 0 V
⎯
⎯ ±100 nA
I_DSS
V_DS = −30 V, V_GS = 0 V
⎯
⎯
−10
μA
V _{(BR) DSS}
V _{(BR) DSX}
I_D = −10 mA, V_GS = 0 V
I_D = −10 mA, V_GS = 20 V
−30 ⎯
⎯
V
−13 ⎯
⎯
V_th
V_DS = −10 V, I_D = −1 mA
−0.8 ⎯
−2.0
V
R_{DS (ON)}
V_GS = −4 V, I_D = −20 A
V_GS = −10 V, I_D = −20 A
⎯
5.5
7.8
mΩ
⎯
2.9
3.7
|Y_fs|
V_DS = −10 V, I_D = −20 A
39.5 79
⎯
S
C_iss
⎯ 4600 ⎯
C_rss
V_DS = −10 V, V_GS = 0 V, f = 1 MHz ⎯
970
⎯
pF
C_oss
⎯ 1500 ⎯
t_r
V_GS ^{0 V}
t_on
−10 V
t_f
⎯
10
⎯
I_D = −20A
V_OUT
⎯
20
⎯
ns
⎯
300
⎯
V_DD ≈ −15 V
t_off
Duty ≤ 1%, t_w = 10 μs
⎯
750
⎯
Q_g
Q_gs1
Q_gd
V_DD ≈ −24 V, V_GS = −10 V,
I_D = −40 A
⎯
130
⎯
⎯
12
⎯
nC
⎯
40
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition
⎯
I_DR = −40 A, V_GS = 0 V
Min Typ. Max Unit
⎯
⎯ −120 A
⎯
⎯
1.2
V
3
2010-01-14