TPCA8106 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPCA8106
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPCA8106
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 2.9 mΩ (typ.)
(V_GS= −10V）
• High forward transfer admittance: |Y_fs| = 79S (typ.)
• Low leakage current: I_DSS = −10 μA (max) (V_DS = −30 V)
• Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
0.15 ± 0.05
1
4
0.595
A
5.0 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
0.05 S
S
1
4
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−30
V
−30
V
±20
V
−40
A
−120
45
W
2.8
W
1.6
W
208
mJ
−40
A
4.5
mJ
150
°C
−55 to 150
°C
4.25 ± 0.2
8
5
1,2,3: SOURCE 4: GATE
5,6,7,8: DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
Note: For Note 1 to 4, please refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-01-14