TLP5214 Datasheet, PDF (3/20 Pages) Toshiba Semiconductor – Isolated IGBT/Power MOSFET gate drive

Absolute Maximum Ratings (Note) (Ta = 25°C ,Unless otherwise specified)
TLP5214
Characteristics
Symbol
Rating
Unit
LED
Input forward current
Input forward current derating (Ta ≥ 95°C)
Peak transient input forward current
(Note 1)
Peak transient input forward current derating (Ta ≥ 95°C)
Reverse Input Voltage
Input power dissipation
Input power dissipation derating (Ta ≥ 95°C)
Detector Positive Input Supply Voltage
“H” peak output current
“L” peak output current
Ta = −40 to 110 °C
(Note 2)
FAULT Output Current
FAULT Pin Voltage
Total Output Supply Voltage
Negative Output Supply Voltage
Positive Output Supply Voltage
Output voltage
Peak Clamping Sinking Current
Miller Clamping Pin Voltage
DESAT Voltage
Output power dissipation
Output power dissipation (Ta ≥ 95°C)
Common Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
(Note 3)
Isolation voltage (AC, 60 s, R.H. ≤ 60%)
(Note 4)
IF
∆IF/∆Ta
IFPT
∆IFPT/∆Ta
VR
PD
∆ PD /∆Ta
VCC1
IOPH
IOPL
IFAULT
VFAULT
(VCC2−VEE)
(VE−VEE)
(VCC2−VE)
VO
IClamp
VClamp
VDESAT
PO
∆ PO /∆Ta
Topr
Tstg
Tsol
BVS
25
−1
1
−25
6
145
−5.0
−0.5 to 7
−4.0
+4.0
8
−0.5 to VCC1
−0.5 to 35
-0.5 to 15
−0.5 to 35 − (VE−VEE)
−0.5 to VCC2
1.7
−0.5 to VCC2
VE to VE + 10
410
−14.0
−40 to 110
−55 to 125
260
5000
mA
mA/°C
A
mA/°C
V
mW
mW/°C
V
A
A
mA
V
V
V
V
V
A
V
V
mW
mW/°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: A ceramic capacitor (1 μF) should be connected between pins 9 and 13, pins 13 and 16 to stabilize the
operation of the high gain linear amplifier.Furthermore, in case VE-VEE > 0 V, a bypass capacitor, which has
good high frequency characteristic, a ceramic capacitor (1 μF) should be connected between pins 9 and 16.
Failure to provide the bypassing may impair the switching property. The total lead length between capacitor
and coupler should not exceed 1 cm.
Note 1: Pulse width PW ≤ 1 μs, 300 pps
Note 2: Exponential waveform pulse width PW ≤ 0.2 μs, f ≤ 15 kHz, VCC = 15 V
Note 3: For the effective lead soldering area.
Note 4: This device considered a two-terminal device: All pins on the LED side are shorted together, and all
pin on the photodetector side are shorted together.
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2015-12-26