TLP5214 Datasheet, PDF (10/20 Pages) Toshiba Semiconductor – Isolated IGBT/Power MOSFET gate drive

ICL – Ta
4
3
VO = VEE +2.5 V
2
1
0
-40 -15 10 35 60 85 110
Ambient Temperature Ta (°C)
TLP5214
(VCLAMP – VEE) - ICL
5
4
Ta = 25 °C
3
Ta = −40 °C
2
1
Ta = 110 °C
0
0
1
2
3
4
Clamp Low Level Sinking Current ICL (A)
ICC2L, ICC2H – Ta
3
VCC = 15 V
2.8
2.6
2.4
ICCH2
2.2
2
ICCL2
1.8
-40 -15 10 35 60 85 110
Ambient Temperature Ta (°C)
ICC2L, ICC2H – VCC2
3
Ta = 25 °C
2.8
2.6
ICCH2
2.4
2.2
ICCL2
2
1.8
15
18
21
24
27
30
Supply Voltage VCC2 (V)
-0.2
VDESAT = 2 V
VCC = 15 V
ICHG – Ta
-0.25
-0.3
-0.35
-40 -15 10 35 60 85 110
Ambient Temperature Ta (°C)
VDESAT – Ta
7.5
VCC2 − VE > VUVLO-
7
6.5
VCC2 = 30 V
VCC2 = 15 V
6
-40 -15 10 35 60 85 110
Ambient Temperature Ta (°C)
10
2015-12-26