TLP330 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Forward current
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector-base
breakdown voltage
Emitter-base
breakdown voltage
Collector dark current
Collector dark current
Collector dark current
DC forward current gain
Capacitance
(collector to emitter)
Symbol
Condition
V_F
I_F = ±100 mA
I_F
V_F= ±0.7V
C_T
V = 0, f = 1 MHz
V_{(BR) CEO} I_C = 0.5 mA
V_{(BR) ECO} I_E = 0.1 mA
V_{(BR) CBO} I_C = 0.1 mA
V_{(BR) EBO} I_E = 0.1 mA
I_CEO
I_CER
I_CBO
h_FE
C_CE
V_CE = 24 V
V_CE = 24 V, Ta = 85°C
V_CE = 24 V, Ta = 85°C
R_BE = 1MΩ
V_CE = 10V
V_CE = 5 V, I_C = 0.5mA
V = 0, f = 1 MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Base photo-current
Collector-emitter
saturation voltage
Off-state collector current
CTR symmetry
Symbol
Condition
I_C / I_F
I_C / I_F(high)
I_PB
V_{CE (sat)}
I_C(off)
I_{C (ratio)}
I_F = ±20 mA V_CE = 1 V
I_F = ±100 mA V_CE = 1 V
I_F = ±5 mA, V_CB = 5 V
I_C = 2.4 mA, I_F = 20 mA
I_C = 2.4 mA, I_F = ±100 mA
V_F = ± 0.7V, V_CE = 24 V
I_C (I_F = -20mA)
/ I_C (I_F = +20mA)
TLP330
Min. Typ. Max. Unit
—
1.4
1.7
V
—
2.5
20
µA
—
100
—
pF
55
—
—
V
7
—
—
V
80
—
—
V
7
—
—
V
—
10
100
nA
—
2
50
µA
—
0.5
10
µA
—
0.1
—
nA
—
400
—
—
—
10
—
pF
MIn. Typ. Max. Unit
25
—
—
%
20
—
80
%
—
10
—
µA
—
—
0.4
V
—
—
0.4
—
1
10
µA
0.5
1
2
—
3
2002-09-25