TLP330 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

TLP330
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I_F
±150
mA
Forward current derating (Ta ≥ 25°C)
∆I_F /°C
-1.5
mA /°C
Peak forward current (100µs pulse,100pps)
I_FP
±1
A
Junction temperature
T_j
125
°C
Collector-emitter voltage
V_CEO
55
V
Collector-base voltage
V_CBO
80
V
Emitter-collector voltage
V_ECO
7
V
Emitter-base voltage
V_EBO
7
V
Collector current
I_C
80
mA
Power dissipation
P_C
150
mW
Power dissipation derating (Ta ≥ 25°C)
∆P_C /°C
-1.5
mW /°C
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
-55~125
°C
Operating temperature range
T_opr
-55~100
°C
Lead soldering temperature (10s)
T_sol
260
°C
Total package power dissipation
P_T
250
mW
Total package power dissipation derating (Ta≥25°C)
∆P_T /°C
-2.5
mW /°C
Isolation voltage (AC, 1 min, R.H. ≤ 60%) (Note 1)
BV_S
5000
Vrms
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V_CC
I_F(RMS)
I_C
T_opr
Min. Typ. Max. Unit
―
5
24
V
―
20
120
mA
―
1
10
mA
-25
―
85
°C
2
2002-09-25