TLP3064_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – GaAlAs IRED & PHOTO-TRIAC

Individual Electrical Characteristics (Ta=25°C)
TLP3064(S)
CHARACTERISTIC
Forward Voltage
Reverse Current
Capacitance
Peak Off-State Current
Peak On-State Voltage
Holding Current
Critical Rate of Rise of
Off-State Voltage
Critical Rate of Rise of
Commutating Voltage
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
V_F
I_R
C_T
I_DRM
V_TM
I_H
dv/dt
I_F = 10 mA
V_R = 3 V
V = 0, f=1MHz
V_DRM=600V
I_TM=100mA
—
Vin=240V r m s , Ta=85°C
dv/dt(c) Vin=60Vr m s , IT=15mA
1.2
—
—
—
—
—
(Fig.1) 200
—
(Fig.1)
1.4 1.7
V
—
10
μA
30
—
pF
10 1000 nA
—
3.0
V
0.6
—
mA
500 — V/μs
0.2
— V/μs
Coupled Electrical Characteristics (Ta=25°C)
CHARACTERISTIC
Trigger LED Current
Inhibit Voltage
Leakage in Inhibited State
Capacitance (Input to Output)
Isolation Resistance
Isolation Voltage
SYMBOL
TEST CONDITION
I_FT
V_T=6V ,Resistive Load
V_IH
IF=Rated I_FT
I_IH
IF=Rated I_FT , V_T=Rated V_DRM
C_S VS=0 , f=1MHz
R_S VS=500V ,R.H.≤60%
AC , 1minute
BV_S AC , 1second,in oil
DC , 1minute,in oil
MIN. TYP. MAX. UNIT
—
—
3
—
—
50
—
—
600
—
0.8
—
1×10¹² 10¹⁴
—
5000
—
—
— 10000 —
— 10000 —
mA
V
μA
pF
Ω
Vrms
Vdc
Fig. 1 dv / dt test circuit
+
V_CC
−
R_in
1
120Ω ₂
3
6
V_in
～
4
R_L
4kΩ
＋5V,V_CC
0V
dv / dt（c） dv / dt
3
2007-10-01