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TLP3064_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – GaAlAs IRED & PHOTO-TRIAC
Absolute Maximum Ratings (Ta=25°C)
TLP3064(S)
CHARACTERISTIC
SYMBOL RATING UNIT
Forward Current
Forward Current Derating (Ta≥25°C)
Peak Forward Current (100μs pulse, 100pps)
Reverse Voltage
Junction Temperature
Off-State Output Terminal Voltage
On-State RMS Current
Ta=25°C
Ta=70°C
On-State Current Derating (Ta≥25°C)
Peak On-State Current (100μs pulse, 120pps)
Peak Nonrepetitive Surge Current (Pw=10ms,DC=10%)
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (10s)
Isolation Voltage (AC,1min. , R.H.≤60%)
(Note 2)
IF
∆IF /°C
IFP
VR
Tj
VDRM
IT(RMS)
∆IT/°C
ITP
ITSM
Tj
Tstg
Topr
Tsol
BVS
30
mA
−0.3 mA /°C
1
A
5
V
125
°C
600
V
100
mA
50
-1.1 mA /°C
2
A
1.2
A
115
°C
−55~150 °C
−40~100 °C
260
°C
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Device considered a two terminal device:Pins1, 2 and 3 shorted together and pin 4 and pin 6 shorted
together.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage
Forward Current
Peak On-State Current
Operating Temperature
VAC
—
—
240
Vac
IF
4.5
6
7.5
mA
ITP
——
1
A
Topr
−10 —
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01