TLP281-4 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP281,TLP281-4
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
Current Transfer Ratio
Saturated CTR
Collector-Emitter
Saturation Voltage
Off-State Collector Current
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
I_C / I_F
I_F = 5 mA, V_CE = 5 V
50
Rank GB 100
—
—
600
600
%
IF = 1 mA, VCE = 0.4 V
—
60
—
I_C / I_{F (sat)}
%
Rank GB 30
—
—
I_C = 2.4 mA, I_F = 8 mA
—
—
0.4
V_{CE (sat)} I_C = 0.2 mA, I_F = 1 mA
—
0.2
—
V
Rank GB _—
—
0.4
I_{C (off)}
V_F = 0.7 V, V_CE = 48 V
—
—
10
µA
ISOLATION CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
Capacitance
(Input to Output)
Isolation Resistance
Isolation Voltage
SYMBOL
TEST CONDITION
C_S
V_S = 0 V, f = 1 MHz
R_S
V_S = 500 V, R.H.≤60%
AC , 1 minute
BV_S
AC , 1 second,in OIL
DC , 1 minute, in OIL
MIN. TYP. MAX. UNIT
—
0.8
—
pF
5×10¹⁰ 10¹⁴
—
Ω
2500 —
—
Vrms
— 5000 —
— 5000
—
Vdc
SWITCHING CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
SYMBOL
Rise Time
Fall Time
Turn-On Time
Turn-Off Time
Turn-On Time
Storage Time
Turn-Off Time
t_r
t_f
t_on
t_off
t_ON
t_s
t_OFF
(Fig.1)SWITCHING TIME TEST CIRCUIT
TEST CONDITION
V_CC = 10 V, I_C = 2 mA
R_L = 100Ω
R_L = 1.9 kΩ (Fig.1)
V_CC = 5 V, I_F = 16 mA
MIN.
—
—
—
—
—
—
—
TYP. MAX. UNIT
2
—
3
—
µs
3
—
3
—
2
—
25
—
µs
40
—
3
2002-06-27