TLP281-4 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP281,TLP281-4
MAXIMUM RATINGS (Ta = 25℃)
CHARACTERISTIC
Forward Current
Forward Current Derating
Pulse Forward Current
Reverse Voltage
Junction Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
(1 Circuit)
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
Isolation Voltage
(Note1)
SYMBOL
I_F
∆I_F /°C
I_FP
V_R
T_j
V_CEO
V_ECO
I_C
P_C
∆P_C /°C
T_j
T_opr
T_stg
T_sol
P_T
∆P_T /°C
BV_S
RATING
TLP281
TLP281−4
50
−0.7 (Ta≥53°C) −0.5 (Ta≥25°C)
1
5
125
80
7
50
UNIT
mA
mA /°C
A
V
°C
V
V
mA
150
100
mW
−1.5
−1.0
125
−55~100
−55~125
260 (10s)
200
170
−2.0
−1.7
2500(AC,1min,R.H.≤60%)
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
(Note1)Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Forward Voltage
Reverse Current
Capacitance
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Dark Current
Capacitance
(Collector to Emitter)
V_F
I_F = 10 mA
I_R
V_R = 5 V
C_T
V = 0, f = 1 MHz
V_{(BR) CEO} I_C = 0.5 mA
V_{(BR) ECO} I_E = 0.1 mA
(Note2)
I_CEO
C_CE
V_CE = 48 V,
Ambient Light Below
(100 ℓx)
V_CE = 48 V, Ta = 85°C
Ambient Light Below
(100 ℓx)
V = 0, f = 1 MHz
1.0 1.15 1.3
V
—
—
10
µA
—
30
—
pF
80
—
—
V
7
—
—
V
—
0.01 0.1
(2) (10)
µA
—
2
(4)
50
(50)
µA
—
10
—
pF
(Note 2) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
2
2002-06-27