TLP268J Datasheet, PDF (3/13 Pages) Toshiba Semiconductor – Photocouplers GaAs Infrared LED and Photo Triac

TLP268J
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol
Note
Rating
Unit
LED Input forward current
I_F
30
mA
Input forward current derating
(T_a ≥ 53 )
∆I_F/∆T_a
-0.3
mA/
Input forward current (pulsed)
I_FP
(Note 1)
1
A
Input reverse voltage
V_R
5
V
Junction temperature
T_j
125

Input power dissipation
P_D
50
mW
Detector Off-state output terminal voltage
V_DRM
600
V
R.M.S. on-state current
(T_a = 25 )
I_T(RMS)
70
mA
R.M.S. on-state current
(T_a = 70 )
I_T(RMS)
40
R.M.S. on-state current derating
(T_a ≥ 25 )
∆I_T(RMS)/∆T_a
-0.67
mA/
ON-state current (pulsed)
I_ONP
(Note 2)
2
A
Peak non-repetitive surge current
I_TSM
(Note 3)
1.2
A
Junction temperature
T_j
125

Output power dissipation
P_O
200
mW
Common Operating temperature
T_opr
-40 to 100

Storage temperature
T_stg
-55 to 125
Lead soldering temperature
(10 s)
T_sol
260
Isolation voltage
AC, 60 s, R.H. ≤ 60 %
BV_S
(Note 4)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 µs, 100 pps
Note 2: Pulse width (PW) ≤ 100 µs, 120 pps
Note 3: Pulse width (PW) ≤ 10 ms
Note 4: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Symbol
Note
Min Typ. Max Unit
AC mains voltage
V_AC


240
V
Input forward current
I_F
4.5
6
7.5
mA
ON-state current (pulsed)
I_ONP


1
A
Operating temperature
T_opr
-25

85

Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
3
2015-03-13
Rev.5.0