TLP260J_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – GaAs IRED + Photo-Triac

TLP260J
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise
of off−state voltage
Critical rate of rise
of commutating voltage
Symbol
Test Condition
Min Typ. Max Unit
V_F
I_R
C_T
I_DRM
V_TM
I_H
I_F = 10 mA
V_R = 5 V
V = 0, f = 1 MHz
V_DRM = 600 V
I_TM = 70 mA
―
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
―
10 1000 nA
―
1.7 2.8
V
―
1.0
―
mA
dv / dt
V_in = 240 Vrms, Ta = 85°C (Fig. 1) ―
500
― V / μs
dv / dt(c) I_T = 15 mA, V_in = 60 Vrms (Fig. 1) ―
0.2
― V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Turn−on time
Symbol
I_FT
t_ON
Test Condition
V_T = 6 V
V_D = 6→4 V, R_L = 100Ω
I_F = rated I_FT × 1.5
Min Typ. Max Unit
―
5
10
mA
―
30 100 μs
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Fig. 1: dv / dt test circuit
R_in
V_CC
+
120Ω
1
－
3
Symbol
C_S
R_S
BV_S
Test Condition
V_S = 0, f = 1 MHz
V_S = 500 V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min Typ. Max Unit
―
0.8
―
pF
5×10¹⁰ 10¹⁴
―
Ω
3000
―
―
Vrms
―
5000 ―
―
5000 ―
Vdc
V_in
6
R_L ^～
4
4kΩ
5 V, V_CC
0V
dV / dt (c) _{dV / dt}
3
2007-10-01