TLP260J_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – GaAs IRED + Photo-Triac

TLP260J
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 53°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Junction temperature
Off−state output terminal voltage
On−state RMS current
Ta = 25°C
Ta = 70°C
On−state current derating (Ta ≥ 25°C)
Peak on−state current (100 μs pulse, 120 pps)
Peak nonrepetitive surge current
(PW = 10 ms, DC = 10%)
I_F
ΔI_F / °C
I_FP
V_R
T_j
V_DRM
I_T(RMS)
ΔI_T / °C
I_TP
I_TSM
50
−0.7
1
5
125
600
70
40
−0.67
2
1.2
mA
mA / °C
A
V
°C
V
mA
mA / °C
A
A
Junction temperature
T_j
Storage temperature range
T_stg
Operating temperature range
T_opr
Lead soldering temperature (10 s)
T_sol
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
(Note 1)
BV_S
100
−55~125
−40~100
260
2500
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered as a two-terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
Peak on−state current
Operating temperature
V_AC
―
― 240 Vac
I_F
15
20
25
mA
I_TP
―
―
1
A
T_opr
−25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01