TLP197G Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET

Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Off-state current
Symbol
V_F
I_R
C_T
I_OFF
Test Condition
I_F=10mA
V_R=5V
V=0, f=1MHz
V_OFF=350V
Capacitance
C_OFF
V=0, f=1MHz
TLP197G
Min. Typ. Max. Unit
1.0 1.15 1.3
V
¾
¾
10
mA
¾
30
¾
pF
¾
¾
1
mA
¾
40
¾
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
On-state resistance
A
connection
Symbol
I_FT
R_ON
Test Condition
I_ON=120mA
I_ON=120mA, I_F=5mA
I_ON=20~120mA,
I_F=5mA
Min. Typ. Max. Unit
¾
1
3
mA
¾
22
35
W
¾
26
40
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
C_S
R_S
BV_S
Test Condition
V_S=0, f=1MHz
V_S=500V, R.H. ^<= 60%
AC,1minute
AC,1second (in oil)
DC,1minute (in oil)
Switching Characteristics (Ta = 25°C)
Min. Typ. Max. Unit
¾
0.8
¾
pF
5´10¹⁰ 10¹⁴
¾
W
1500 ¾
¾
V_rms
¾ 3000 ¾
¾ 3000 ¾
V_dc
Characteristic
Turn-on time
Turn-off time
Symbol
t_ON
t_OFF
Test Condition
Min.
R_L=200W
V_CC=20V, I_F=5mA
(Note 2) ¾
¾
Typ. Max. Unit
0.3
1
ms
0.1
1
(Note2): Switching time test circuit
I_F
1
2
6
R_L ^VCC
V_OUT
4
I_F
V_OUT
t_ON
10%
90%
t_OFF
3
2002-09-25