TLP197G Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET

Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 25°C)
Pulse forward current (100µs pulse,100pps)
Reverse voltage
Junction temperature
Off-state output terminal voltage
A connection
On-state current
B connection
C connection
A connection
On-state current derating (Ta ≥ 25°C) B connection
C connection
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature(10 s)
Isolation voltage (AC,1 min.,RH ≤ 60%)
(Note 1)
I_F
DI_F/°C
I_FP
V_R
T_j
V_OFF
I_ON
DI_ON/°C
T_j
T_stg
T_opr
T_sol
BV_S
50
-0.5
1
5
125
350
120
-1.2
125
-55~125
-40~85
260
1500
mA
mA/°C
A
V
°C
V
mA
mA/°C
°C
°C
°C
°C
Vrms
(Note 1): Device considered a two-terminal device: Pins1,2 and 3 shorted together and
pins 4,5 and 6 shorted together.
TLP197G
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
On-state current(A connection)
Operating temperature
Symbol
V_OFF
I_F
I_ON
T_opr
Min. Typ. Max. Unit
¾
¾
280
V
5
7.5
25
mA
¾
¾
100 mA
-20
¾
65
°C
Circuit Connections
1
6
LOAD
2
5
AC
or _DC
3
4
A Connection
1
6
LOAD
2
5
DC
3
4
B Connection
1
6
LOAD
2
5
DC
3
4
C Connection
2
2002-09-25