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TLP137_07 Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – Photo−Transistor Office Machine | |||
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Reverse current
Capacitance
Collectorâemitter
breakdown voltage
Emitterâcollector
breakdown voltage
Collectorâbase breakdown voltage
Emitterâbase breakdown voltage
Collector dark current
Collector dark current
Collector dark current
DC forward current gain
Capacitance (collector to emitter)
VF
IF = 10mA
IR
VR = 5V
CT V = 0, f = 1MHz
V(BR)CEO IC = 0.5mA
V(BR)ECO IE = 0.1mA
V(BR)CBO IC = 0.1mA
V(BR)EBO IE = 0.1mA
ICEO
VCE = 48V
VCE = 48V, Ta = 85°C
ICER
VCE = 48V, Ta = 85°C
RBE = 1Mâ¦
ICBO VCB = 10V
hFE VCE = 5V, IC = 0.5mA
CCE V= 0, f = 1MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Low input CTR
Base photoâcurrent
Collector-emitter
saturation voltage
Offâstate collector current
Symbol
Test Condition
IC / IF
IC / IF(low)
IPB
VCE(sat)
IC(off)
IF = 1mA, VCE = 0.5V
Rank BV
IF = 0.5mA, VCE = 1.5V
Rank BV
IF = 1mA, VCB = 5V
IC = 0.5mA, IF = 1mA
IC = 1mA, IF = 1mA
Rank BV
V F = 0.7V, VCE = 48V
TLP137
Min. Typ. Max. Unit
1.0 1.15 1.3
V
â
â
10
μA
â
30
â
pF
80
â
â
V
7
â
â
V
80
â
â
V
7
â
â
V
â
10 100 nA
â
2
50
μA
â
0.5
10
μA
â
0.1
â
nA
â 1000 â
â
â
12
â
pF
Min. Typ. Max. Unit
100
â 1200
%
200
â 1200
50
â
â
%
100
â
â
â
5
â
μA
â
â
0.4
â
0.2
â
V
â
â
0.4
â
â
10
μA
3
2007-10-01
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