TLP130_07 Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – Programmable Controllers

Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base breakdown voltage
Emitter−base breakdown voltage
Collector dark current
Collector dark current
Collector dark current
DC forward current gain
Capacitance collector to emitter
V_F I_F = ±10mA
C_T V = 0, f = 1MHz
V_(BR)CEO I_C = 0.5mA
V_(BR)ECO I_E = 0.1mA
V_(BR)CBO I_C = 0.1mA
V_(BR)EBO I_E = 0.1mA
I_CEO
V_CE = 48V
V_CE = 48V, Ta = 85°C
I_CER
V_CE = 48V, Ta = 85°C
R_BE = 1MΩ
I_CBO V_CB = 10V
h_FE V_CE = 5V, I_C = 0.5mA
C_CE V = 0 , f = 1MHz
TLP130
Min. Typ. Max. Unit
1.0 1.15 1.3
V
―
60
―
pF
80
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10 100 nA
―
2
50
μA
―
0.5
10
μA
―
0.1
―
nA
― 400 ―
―
―
10
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current
Collector-emitter
saturation voltage
Off−state collector current
CTR symmetry
Symbol
Test Condition
Min.
I_C / I_F
I_C / I_F(sat)
I_PB
V_CE(sat)
I_C(off)
I_C(ratio)
I_F = ±5mA, V_CE = 5V
Rank GB
I_F = ±1mA, V_CE = 0.4V
Rank GB
I_F = ±5mA, V_CB = 5V
I_C = 2.4mA, I_F = ±8mA
I_C = 0.2mA, I_F = ±1mA
Rank GB
I_F = ±0.7mA, V_CE = 48V
I_C(I_F = −5mA) / I_C(I_F = 5mA)
(Note 2)
50
100
―
30
―
―
―
―
―
0.33
Typ. Max. Unit
―
600
%
―
600
60
―
%
―
―
10
―
μA
―
0.4
0.2
―
V
―
0.4
1
10
μA
―
3
―
IC2(IF = IF2, VCE = 5V)
(Note 2) I_{C(ratio) = IC1(IF = IF1, VCE = 5V)}
I_F1
I_F2
I_C1
V_CE
I_C2
3
2007-10-01