TLP124_07 Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – Photo−Transistor Office Machine

Recommended Operating Conditions
TLP124
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current
Collector current
Operating temperature
V_CC
I_F
I_C
T_opr
―
5
48
V
―
1.6
20
mA
―
1
10
mA
−25
―
75
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse Current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector dark current
Capacitance collector to emitter
Symbol
Test Condition
V_F
I_F = 10 mA
I_R
V_R = 5 V
C_T
V = 0, f = 1 MHz
V_{(BR) CEO} I_C = 0.5 mA
V_{(BR) ECO} I_E = 0.1 mA
V_CE = 48 V
I_D
V_CE = 48 V, Ta = 85°C
C_CE
V = 0, f = 1 MHz
Min. Typ. Max. Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
80
―
―
V
7
―
―
V
―
10 100 nA
―
2
50
μA
―
12
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Low input CTR
Collector−emitter
saturation voltage
Off−state collector current
Symbol
Test Condition
I_C / I_F
I_F = 1mA, V_CE = 0.5 V
Rank BV
I_C / I_{F (low)}
I_F = 0.5 mA, V_CE = 1.5 V
Rank BV
V_{CE (sat)}
I_C = 0.5 mA, I_F = 1 mA
I_C = 1 mA, I_F = 1 mA
Rank BV
I_C(off)
V_F = 0.7V, V_CE = 48 V
MIn. Typ. Max. Unit
100 ― 1200
%
200 ― 1200
50
―
―
%
100 ―
―
―
―
0.4
―
0.2
―
V
―
―
0.4
―
―
10
μA
Coupled Electrical Characteristics (Ta = −25~75°C)
Characteristic
Current transfer ratio
Low input CTR
Symbol
Test Condition
I_C / I_F
I_F = 1mA, V_CE = 0.5 V
Rank BV
I_C / I_{F (low)}
I_F = 0.5 mA, V_CE = 1.5 V
Rank BV
Min. Typ. Max. Unit
50
―
―
%
100 ―
―
%
―
50
―
%
― 100 ―
%
3
2007-10-01