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TLP124_07 Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Photo−Transistor Office Machine
Current Transfer Ratio
Classification
Rank BV
Standard
Current Transfer Ratio (min.)
Ta = 25°C
Ta = −25~75°C
IF = 1mA
VCE = 0.5V
IF = 0.5mA
VCE = 1.5V
IF = 1mA
VCE = 0.5V
200%
100%
100%
100%
50%
50%
Marking Of
Classification
BV
BV, Blank
(Note) Application type name for certification test, please use standard product type name, i. e.
TLP124 (BV): TLP124
TLP124
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating
Peak forward current
(100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Peak collector current
(10ms pulse, 100pps)
Power dissipation
Power dissipation derating
(Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation
derating (Ta ≥ 25°C)
Isolation voltage
(AC, 1min., R.H. ≤ 60%)
(Note 1)
IF
ΔIF / °C
IFP
VR
Tj
VCEO
VECO
IC
ICP
PC
ΔPC / °C
Tj
Tstg
Topr
Tsol
PT
ΔPT / °C
BVS
50
−0.7 (Ta ≥ 53°C)
1
5
125
80
7
50
100
150
−1.5
125
−55~125
−55~100
260
200
−2.0
3750
mA
mA / °C
A
V
°C
V
V
mA
mA
mW
mA / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.
2
2007-10-01