TLP1004A Datasheet, PDF (3/10 Pages) Toshiba Semiconductor – INFRARED LED + PHOTO IC

TLP1004A(F),TLP1005A(F)
Opto−Electrical Characteristics
(unless otherwise specified, Ta = −25~85°C, V_CC = 5V ±10%)
Characteristic
Symbol
Test Condition
Min. Typ.
Forward voltage
Reverse current
Peak emission
wavelength
Operating supply voltage
Low level supply current
High level supply
current
Low level output voltage
High level output
voltage
Peak sensitivity
wavelength
L → H threshold input
current
H → L threshold input
current
Hysteresis ratio
Propagation delay time
(L → H)
Propagation delay time
(H → L)
Rise time
Fall time
V_F
I_R
λ_P
V_CC
I_CCL
I_CCH
V_OL
V_OH
I_F = 10mA, Ta = 25°C
V_R = 5V, Ta = 25°C
I_F = 15mA, Ta = 25°C
―
I_F = *1
I_F = *1, V_CC = 17V
I_F = *2
I_F = *2, V_CC = 17V
I_OL = 16mA, I_F = *1
Ta = 25°C
I_OL = 16mA, I_F = *1
V_CC = 17V
I_F = *2
1.00 1.15
―
―
―
940
4.5
―
―
―
―
―
―
―
―
―
―
0.07
―
―
0.9V_CC ―
λ_P
I_FLH
I_FHL
Ta = 25°C
Ta = 25°C
V_CC = 17V
Ta = 25°C
V_CC = 17V
I_FHL / I_FLH
―
t_pLH
t_pHL
t_r
t_f
V_CC = 5V
I_F = 15mA
R_L = 280Ω
Ta = 25°C
―
900
―
―
TLP1004A(F)
―
―
―
―
TLP1005A(F)
―
―
TLP1004A(F)
―
0.67
TLP1005A(F)
―
1.5
TLP1004A(F)
―
3
TLP1005A(F)
―
6
TLP1004A(F)
―
6
TLP1005A(F)
―
3
―
0.1
(Note)
―
0.05
*1. 0mA for TLP1004A(F). 15mA for TLP1005A(F)
*2. 15mA for TLP1004A(F). 0mA for TLP1005A(F).
Max. Unit
1.30
V
10
µA
―
nm
17
V
6.0
mA
7.5
3.0
mA
3.2
0.3
0.4
V
―
―
mA
4
mA
7
4
mA
7
―
―
―
―
―
―
µs
―
―
―
3
2004-02-13