TIM5359-35SL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCES
TIM5359-35SL
Output Power (Pout) vs. Frequency
VDS=10V
IDS≅8.5A
Pin=37.0dBm
46
45
44
43
5.3
5.4 5.5 5.6 5.7 5.8 5.9
Frequency (GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=5.9GHz
VDS=10V
IDS=8.5A
80
46
Pout
70
45
60
44
50
43
42
ηadd
40
30
41
20
40
10
39
32
34
36
38
Pin(dBm)
3