TIM5359-35SL Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM5359-35SL
FEATURES
n LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 35.0dBm
Single Carrier Level
n HIGH POWER
P1dB=45.5dBm at 5.3GHz to 5.9GHz
n HIGH GAIN
G1dB=8.5dB at 5.3GHz to 5.9GHz
n BROADBAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT
Output Power at 1dB Gain P1dB
dBm
Compression Point
Power Gain at 1dB Gain
Compression Point
G1dB
VDS= 10V
dB
f = 5.3 to 5.9GHz
Drain Current
IDS1
A
Gain Flatness
∆G
dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation
IM3
Two Tone Test
dBc
Distortion
Po=35.0dBm
Drain Current
Channel Temperature Rise
IDS2
(Single Carrier Level)
A
∆Tch ^{(VDS X IDS + Pin – P1dB)} °C
X Rth(c-c)
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
MIN.
45.0
7.5



-42


TYP. MAX.
45.5 
8.5 
8.0 9.0
 ±0.8
38 
-45 
8.0 9.0
 100
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
VGSO
CONDITIONS
VDS= 3V
IDS= 10.5A
VDS= 3V
IDS= 140mA
VDS= 3V
VGS= 0V
IGS= -420µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  6500 
V -1.0 -2.5 -4.0
A
 20 26
V
-5
°C/W 

1.0 1.3
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul., 2006