TCS10NPU_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TCS10NPU
DC Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
V_CC (V) Min Typ. Max Unit
Output Voltage
Hi-Level
Lo- Level
V_OH
V_OL
I_OH = −1.0 mA
I_OL = 1.0 mA
2.3 to 3.6
V_CC
x 90%
⎯
⎯
V
2.3 to 3.6 ⎯
⎯
V_CC
x 10%
Supply Current
Average
Current
I_CC
Current at pulse driving ^{2.3 to 2.7}
(Note 3, Fig. A)
3.0 to 3.6
⎯
⎯
5.5 9.5
8.7 13.2
μA
Operating
Current
I_CCON
Peak current
(Note 3, Fig. A)
2.3 to 3.6 ⎯
0.7 1.3
mA
Operating Frequency
f_opr
(Fig. A)
2.3 to 3.6 ⎯
25
⎯
Hz
Note 3: Supply Current is pulsed periodically by internal circuit.
Magnetic Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
(Note 4, Fig. B)
V_CC (V) Min Typ. Max Unit
Magnetic
Flux
Density
Operating Point
Releasing Point
Hysteresis
B_ON
B_OFF
B_H
V_OUT = V_OL
V_OUT = V_OH
|B_ON - B_OFF|
2.3 to 3.6 -2.5 -1.8 ⎯
2.3 to 3.6 ⎯
-0.8 -0.3
mT
2.3 to 3.6 ⎯
1.0
⎯
Note 4: Uniform magnetic field perpendicularly to the magnetic sensor.
Note: Direction of the magnetic field
Magnetic Field, B
(Fig. A) : I_CC Characteristics
I_CC
1/fopr (fopr=25 Hz)
Operating Current
(Typ. 0.7 mA）
Average Current
(Typ. 5.5 μA)
Time (t)
(Fig. B) : Operating Characteristics
V_O
V_OH
B_H
V_OL
North-Pole
B_ON B_OFF
0 South- Pole
Magnetic Flux Density (mT)
3
2014-03-01