TCS10DPU_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TCS10DPU
DC Characteristics (Ta = 25°C)
Characteristics
Symbol
Output Voltage
High-Level
Low-Level
V_OH
V_OL
Condition
I_OH = −1.0 mA
I_OL = 1.0 mA
V_CC (V) Min Typ. Max Unit
2.3 to 3.6
V_CC
x 90%
⎯
⎯
V
2.3 to 3.6 ⎯
⎯
V_CC
x 10%
Supply Current
Average
Current
I_CC
Current at pulse riving ^{2.3 to 2.7}
(Note 3, Fig. A)
3.0 to 3.6
⎯
⎯
8.5 13.2
12.4 18.3
μA
Operating
Current
I_CCON
Peak current
(Note 3, Fig. A)
2.3 to 3.6 ⎯
0.7
1.3
mA
Operating Frequency
f_opr
(Fig. A)
2.3 to 3.6 ⎯
25
⎯
Hz
Note 3: I_CC is pulsed periodically.
Magnetic Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
(Note 4, Fig. B)
V_CC (V) Min Typ. Max Unit
Magnetic
Flux
Density
Operating Point
Releasing Point
Hysteresis
B_ONS
B_ONN
B_OFFS
B_OFFN
B_H
V_OUT = V_OL
V_OUT = V_OH
|B_ON - B_OFF|
⎯
1.8 2.5
2.3 to 3.6
-2.5 -1.8 ⎯
0.3
0.8
⎯
mT
2.3 to 3.6
⎯ -0.8 -0.3
2.3 to 3.6 ⎯
1.0
⎯
Note 4: Uniform magnetic field perpendicularly to the magnetic sensor.
Note: Direction of the Magnetic field
Magnetic Field, B
(Fig. A): I_CC Characteristics
I_CC
1/fopr (fopr = 25 Hz)
Operating Current
(typ. 0.7 mA）
Average Current
(typ. 8.5 μA)
Time
(Fig. B): Operating Characteristics
V_OUT
V_OH
B_H
B_H
North-Pole BONN BOFFN ⁰ BOFFS BONS
Magnetic Flux Density
V_OL
South-Pole
3
2014-03-01