TC58DVM92A1FT00 Datasheet, PDF (3/44 Pages) Toshiba Semiconductor – MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

VALID BLOCKS (1)
TC58DVM92A1FT00
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
N_VB
Number of Valid Blocks
4016

4096
Blocks
(1) The device occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
V_CC
Power Supply Voltage
V_IH
High Level input Voltage
V_IL
Low Level Input Voltage
* 2 V (pulse width lower than 20 ns)
MIN
2.7
2.0
0.3*
TYP.
3.3


MAX
3.6
V_CC  0.3
0.8
UNIT
V
V
V
DC CHARACTERISTICS (Ta 0° to 70°C, V_CC 2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
MIN
I_IL
Input Leakage Current
V_IN 0 V to V_CC

I_LO
I_CCO1
I_CCO3
Output Leakage Current
V_OUT 0 V to V_CC

Operating Current (Serial Read) CE V_IL, I_OUT 0 mA, t_cycle 50 ns 
Operating Current
(Command Input)
t_cycle 50 ns

I_CCO4
Operating Current (Data Input) t_cycle 50 ns

Operating Current
I_CCO5
(Address Input)
t_cycle 50 ns

I_CCO7
I_CCO8
I_CCS1
I_CCS2
Programming Current
Erasing Current
Standby Current
Standby Current




CE V_IH, WP 0V/V_CC

CE V_CC  0.2 V_, WP 0V/V_CC

V_OH
High Level Output Voltage
I_OH 400 PA
2.4
V_OL
Low Level Output Voltage
I_OL 2.1 mA

I_OL ( RY/BY ) Output Current of RY/BY pin V_OL 0.4 V

TYP.


10
10
10
10
10
10

10


8
MAX
r10
r10
30
30
30
30
30
30
1
50

0.4

UNIT
PA
PA
mA
mA
mA
mA
mA
mA
mA
PA
V
V
mA
2003-01-10 3/44