TC55W800XB7 Datasheet, PDF (3/12 Pages) Toshiba Semiconductor – 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM

TC55W800XB7,8
MAXIMUM RATINGS
SYMBOL
RATING
V_DD
Power Supply Voltage
V_IN
Input Voltage
V_I/O
Input/Output Voltage
P_D
Power Dissipation
T_solder
Soldering Temperature (10s)
T_stg
Storage Temperature
T_opr
Operating Temperature
*: −2.0 V when measured at a pulse width of 25ns
VALUE
−0.3~4.2
−0.3*~4.2
−0.5~V_DD + 0.5
0.6
260
−55~125
−40~85
UNIT
V
V
V
W
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS (Ta = −40° to 85°C)
SYMBOL
PARAMETER
V_DD
Power Supply Voltage
V_IH
Input High Voltage
V_DD = 2.3 V~3.3 V
V_DD = 2.7 V~3.3 V
V_IL
Input Low Voltage
V_DH
Data Retention Supply Voltage
*: −2.0 V when measured at a pulse width of 25ns
MIN
2.3
2.0
2.2
−0.3*
1.5
TYP
MAX
UNIT

3.3
V

V_DD + 0.3
V

V_DD × 0.22
V

3.3
V
2001-10-03 3/12