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| TC55NEM208A Datasheet, PDF (3/10 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |||
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TC55NEM208AFPN/AFTN55,70
DC RECOMMENDED OPERATING CONDITIONS (Ta = â40° to 85°C)
SYMBOL
PARAMETER
VDD
Power Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
VDH
Data Retention Supply Voltage
*: â2.0 V when measured at a pulse width of 20 ns
MIN
4.5
2.2
â0.3*
2.0
TYP
MAX
UNIT
5.0
5.5
V

VDD + 0.3
V

0.6
V

5.5
V
DC CHARACTERISTICS (Ta = â40° to 85°C, VDD = 5 V ± 10%)
SYMBOL
IIL
IOH
IOL
ILO
lDDO1
lDDO2
IDDS1
IDDS2
PARAMETER
Input Leakage
Current
Output High Current
Output Low Current
Output Leakage
Current
Operating Current
Standby Current
TEST CONDITION
MIN TYP MAX UNIT
VIN = 0 V~VDD

 ±1.0 µA
VOH = 2.4 V
â1.0 
 mA
VOL = 0.4 V
2.1

 mA
CE = VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD 
 ±1.0 µA
CE = VIL and R/W = VIH,
IOUT = 0 mA,
Other Input = VIH/VIL
CE = 0.2 V and R/W = VDD â 0.2 V,
IOUT = 0 mA,
Other Input = VDD â 0.2 V/0.2 V
MIN
1 µs
tcycle
MIN
1 µs


35
mA

8



30
mA

3

CE = VIH


3 mA
CE = VDD â 0.2 V,
VDD = 2.0 V~5.5 V
Ta = 25°C

1

Ta = â40~40°C 

3
µA
Ta = â40~85°C 

20
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
CIN
Input Capacitance
VIN = GND
COUT
Output Capacitance
VOUT = GND
Note: This parameter is periodically sampled and is not 100% tested.
MAX
10
10
UNIT
pF
pF
2002-09-18 3/10
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