TC4W66F_07 Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – Dual Bilateral Switch

Dynamic Electrical Characteristics (Ta = 25°C, V_SS = 0 V, C_L = 50 pF)
TC4W66F/FU
Characteristics
Symbol
Test
Circuit
Test Condition
V_SS V_DD ^{Min Typ. Max Unit}
(V) (V)
Phase difference between
input to output
φI-O
⎯ C_L = 50 pF
0
5
⎯
15
40
0
10
⎯
8
20
ns
0
15
⎯
5
15
Propagation delay time
(CONTROL-OUT)
t_pZL
t_pZH
R_L = 1 kΩ
⎯
C_L = 50 pF
0
5
⎯
55 120
0
10
⎯
25
40
ns
0
15
⎯
20
30
Propagation delay time
(CONTROL-OUT)
t_pLZ
t_pHZ
R_L = 1 kΩ
⎯
C_L = 50 pF
0
5
⎯
45
80
0
10
⎯
30
70
ns
0
15
⎯
25
60
Max control input repetition
Rate
f_max
R_L = 1 kΩ
⎯
(C)
C_L = 50 pF
0
5
⎯
10
⎯
0
10
⎯
12
⎯ MHz
0
15
⎯
12
⎯
−3dB cutoff frequency
Total harmonic distortion
f_max
(I-O)
⎯
R_L = 1 kΩ
⎯
−5
5
C_L = 50 pF (Note 1)
R_L = 10 kΩ
⎯
−5
5
f = 1 kHz
(Note 2)
⎯
30
⎯ MHz
⎯ 0.03 ⎯
%
−50dB feed through frequency
⎯
−50dB crosstalk frequency
⎯
Crosstalk
(CONTROL-OUT)
⎯
Input capacitance
C_IN
⎯ R_L = 1 kΩ
(Note 3) −5
5
⎯ 600 ⎯ kHz
⎯ R_L = 1 kΩ
(Note 4) −5
5
⎯
1
⎯ MHz
R_IN = 1 kΩ
0
5
⎯ 200 ⎯
⎯ R_OUT = 10 kΩ
0
10
⎯
400
⎯
mV
C_L = 15 pF
0
15
⎯
600
⎯
⎯ Control input
⎯ Switch I/O
⎯
5
7.5
pF
⎯
10
⎯
Feed through capacitance
C_IN-OUT
⎯
⎯
⎯
0.5
⎯
pF
Note 1:
Since wave of ±2.5 V_p-p shall be used for V_IS and the frequency of 20 ℓog ₁₀
V_OS
V_IS
= −3dB shall be f_max.
Note 2:
Note 3:
Note 4:
V_IS shall be sine wave of ±2.5 V_p-p.
Sine wave of ±2.5 V_p-p shall be used for V_IS and the frequency of 20 ℓog ₁₀
feed-through.
Sine wave of ±2.5 V_p-p shall be used for V_IS and the frequency of 20 ℓog ₁₀
crosstalk.
V_OUT
V_IS
V_OUT
V_IS
= −50dB shall be
= −50dB shall be
3
2007-11-01