TC4W66F_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Dual Bilateral Switch

TC4W66F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC4W66F,TC4W66FU
Dual Bilateral Switch
The TC4W66 contains two independence circuits of
bidirectional switches.
When control input CONT is set to “H” level, the impedance
between input and output of the switch becomes low and when it
is set to “L” level, the switch becomes high. This can be applied
for switching of analog signals and digital signals.
Features
• ON-resistance, R_ON
250 Ω (typ.) ................... V_DD − V_SS = 5 V
110 Ω (typ.) ................... V_DD − V_SS = 10 V
70 Ω (typ.) ..................... V_DD − V_SS = 15 V
• OFF-resistance, R_OFF
R_OFF (typ.) > 10⁹ Ω
TC4W66F
TC4W66FU
Absolute Maximum Ratings
Weight
SOP8-P-1.27: 0.05 g (typ.)
SSOP8-P-0.65: 0.02 g (typ.)
Characteristics
Symbol
Rating
Unit
DC supply voltage
Control input voltage
Switch I/O voltage
Power dissipation
Potential difference across I/O during
ON
Control input current
Operating temperature range
Storage temperature
Lead temp./time
V_DD
V_{C IN}
V_I/O
P_D
V_I-V_O
I_{C IN}
T_opr
T_stg
T_L
V_SS − 0.5 to V_SS + 20
V
V_SS − 0.5 to V_DD + 0.5
V
V_SS − 0.5 to V_DD + 0.5
V
300
mW
±0.5
V
±10
mA
−40 to 85
°C
−65 to 150
°C
260°C/10 s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
TC4W66F
TC4W66FU
1
2007-11-01