SSM6N24TU Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – High Speed Switching Applications

1600
1400
1200
1000
800
600
400
200
0
0
ID - VDS
1.8
2.0
3.0
4.0
5.0
1.6
VGS=1.4V
Common Source
Ta=25°C
0.2
0.4
0.6
0.8
1
Drain-Source voltage VDS (V)
200
180
160
140
120
100
80
60
40
20
0
0
RDS(ON) - ID
Common Source
Ta=25°C
2.5V
VGS=4.5V
200 400 600 800 1000 1200 1400 1600
Drain current ID (mA)
SSM6N24TU
10000
ID - VGS
1000
100
Ta=100°C
10
1
0.1
0.01
0
25°C
-25°C
Common Source
VDS=3V
1
2
3
Gate-Source voltage VGS (V)
RDS(ON) - VGS
400
Common Source
350
ID=500m A
300
250
200
25°C
150
Ta=100°C
100
-25°C
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-Source voltage VGS (V)
RDS(ON) - Ta
400
Common Source
350
300
250
2.5V,250m A
200
150
100
VGS=4.5V,ID=500m A
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
Vth - Ta
1
Common Source
ID=0.1m A
0.8
VDS=3V
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2007-11-01