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SSM6N24TU Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – High Speed Switching Applications | |||
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Electrical Characteristics (Ta = 25°C)
SSM6N24TU
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = 展 12 V, VDS = 0
â¯
â¯
±1
μA
V (BR) DSS
V (BR) DSX
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = â12 V
30
â¯
â¯
V
18
â¯
â¯
IDSS
VDS = 30 V, VGS = 0
â¯
â¯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.5
â¯
1.1
V
âYfsâ
VDS = 3 V, ID = 0.25 A
(Note2) 1.0 2.0
â¯
S
RDS (ON)
ID = 0.50 A, VGS = 4.5 V
ID = 0.25 A, VGS = 2.5 V
(Note2) â¯
(Note2) â¯
120 145
mΩ
140 180
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⯠245 â¯
pF
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
33
â¯
pF
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
41
â¯
pF
ton
VDD = 10 V, ID = 0.25 A,
toff
VGS = 0~2.5 V, RG = 4.7 Ω
â¯
9
â¯
ns
â¯
15
â¯
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
IN
0
10 μs
VDD = 10 V
RG = 4.7 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
VDD
(c) VOUT
2.5 V
0V
VDD
VDS (ON)
10%
90%
10%
90%
tr
tf
ton
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
2
2007-11-01
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