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SSM3J307T Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) | |||
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ID â VDS
-10
-8V
-2.5V -1.8 V
-4.5V
-8.0
-3.0V
-6.0
-1.5 V
-4.0
VGS=-1.2 V
-2.0
0
0
Common Source
Ta = 25 °C
-0.2
-0.4
-0.6
-0.8
-1
Drainâsource voltage VDS (V)
SSM3J307T
-10
Common Source
VDS = -3 V
-1
ID â VGS
-0.1
-0.01
Ta = 100 °C
25 °C
â 25 °C
-0.001
-0.0001
0
-1.0
-2.0
Gateâsource voltage VGS (V)
RDS (ON) â VGS
150
ID =-4.0A
Common Source
Ta = 25°C
100
25 °C
50
Ta = 100 °C
â 25 °C
0
0
-2
-4
-6
-8
Gateâsource voltage VGS (V)
RDS (ON) â ID
150
Common Source
Ta = 25°C
100
-1.2 V
50 -1.5 V
-1.8V
-2.5 V
VGS = -4.5 V
0
0
-2.0
-4.0
-6.0
-8.0
-10
Drain current ID (A)
RDS (ON) â Ta
150
Common Source
100
-1.5 A / -1.8V
-4.0 A / -2.5 V
-0.75 A / -1.5 V
50
ID = -4.0 A / VGS = -4.5 V
0
â50
0
50
100
150
Ambient temperature Ta (°C)
Vth â Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
-0.5
0
â50
0
50
100
150
Ambient temperature Ta (°C)
3
2008-10-28
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