SSM3J307T Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)

SSM3J307T
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
V _{(BR) DSS} I_D = -1 mA, V_GS = 0 V
V _{(BR) DSX} I_D = -1 mA, V_GS = +8 V
-20
⎯
⎯
V
-12
⎯
⎯
I_DSS
V_DS = -20V, V_GS = 0 V
⎯
⎯
-10
μA
I_GSS
V_GS = ±8 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = -3 V, I_D = -1 mA
-0.3
⎯
-1.0
V
⏐Y_fs⏐ V_DS = -3 V, I_D = -4.0 A
(Note 3) 9.8
⎯
⎯
S
I_D = -4.0 A, V_GS = -4.5 V
(Note 3) ⎯
25
31
I_D = -4.0 A, V_GS = -2.5 V
(Note 3) ⎯
31
40
R_{DS (ON)}
mΩ
I_D = -1.5 A, V_GS = -1.8 V
(Note 3) ⎯
38
56
I_D = -0.75 A, V_GS = -1.5 V (Note 3) ⎯
46
83
C_iss
⎯ 1170 ⎯
C_oss
V_DS = -10 V, V_GS = 0 V, f = 1 MHz
⎯ 250 ⎯
pF
C_rss
⎯ 200 ⎯
Q_g
V_DS = −10 V, I_D = −5.0 A
Q_gs
V_GS = −4.5 V
Q_gd
⎯
19
⎯
⎯ 14.2 ⎯
nC
⎯
4.8
⎯
t_on
V_DD = -10 V, I_D = -2.0 A,
t_off
V_GS = 0 to -2.5 V, R_G = 4.7 Ω
⎯
35
⎯
ns
⎯ 160 ⎯
V_DSF
I_D = 5.0 A, V_GS = 0 V
(Note 3) ⎯ 0.83 1.2
V
Switching Time Test Circuit
(a) Test Circuit
0
IN
−2.5V
10 μs
V_DD = − 10 V
R_G = 4.7 Ω
D.U. ≤ 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
OUT
R_L
V_DD
(b) V_IN
0V
−2.5 V
V_{DS (ON)}
(c) V_OUT
V_DD
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Usage Considerations
Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below −1 mA for the
SSM3J307T. Then, for normal switching operation, V_GS(on) must be higher than V_th, and V_GS(off) must be lower than V_th.
This relationship can be expressed as: V_GS(off) < V_th < V_GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2008-10-28