SSM3J306T Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Power management switch Applications

SSM3J306T
I_D – V_DS
-5
−10 V
−6 V
−4 V
−4
−3.6 V
−3
VGS = −3.3 V
−2
−1
Common Source
Ta = 25°C
0
0
−0.2
−0.4
−0.6
−0.8
−1
Drain–source voltage V_DS (V)
I_D – V_GS
-10
Common Source
V_DS = −5 V
−1
−0.1
−0.01
−0.001
Ta = 100°C
25°C
−25°C
−0.0001
0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −3.5 −4.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
500
450
400
350
300
250
200
150
100
50
0
0
ID = −1 A
Common Source
25 °C
Ta = 100°C
−25°C
−2
−4
−6
−8
−10
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
500
450
400
350
300
250
200
150
100
50
0
0
Common Source
Ta = 25°C
VGS = −4.0 V
−10 V
−1
−2
−3
−4
−5
Drain current I_D (A)
R_{DS (ON)} – Ta
500
Common Source
400
300
I_D = –0.5 A / V_GS = –4.0 V
200
100
–1.0 A / –10 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
V_th – Ta
−2.0
−1.5
−1.0
−0.5
Common source
VDS = −5 V
0 ^{ID = −1 mA}
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2007-11-01