RN4985FE Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_CE = 50V, I_B = 0
― V_EB = 5V, I_C = 0
― V_CE = 5V, I_C = 10mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 0.2V, I_C = 5mA
― V_CE = 5V, I_C = 0.1mA
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0, f = 1 MHz
RN4985
Min Typ. Max Unit
―
― 100
nA
―
― 500
0.078 ― 0.145 mA
80
―
―
―
―
0.1 0.3
V
0.6
―
1.1
V
0.5
―
0.8
V
― 250 ― MHz
―
3
6
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_CE = −50V, I_B = 0
― V_EB = −5V, I_C = 0
― V_CE = −5V, I_C = −10mA
― I_C = −5mA, I_B = −0.25mA
― V_CE = −0.2V, I_C = −5mA
― V_CE = −5V, I_C = −0.1mA
― V_CE = −10V, I_C = −5mA
― V_CB = −10V, I_E = 0
Min Typ. Max Unit
―
― −100
nA
―
― −500
−0.078 ― −0.145 mA
80
―
―
―
― −0.1 −0.3 V
−0.6 ― −1.1 V
−0.5 ― −0.8 V
―
200
― MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circui
t
―
―
Test Condition
―
―
Min Typ. Max Unit
1.54 2.2 2.86 kΩ
0.0421 0.0468 0.0515 ―
3
2007-11-01