RN4985FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN4985
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4985
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z Including two devices in US6 (ultra super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 2.2kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
50
50
5
100
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
−50
−50
−5
−100
Unit
JEDEC
―
JEITA
―
V
TOSHIBA
2-2J1A
V
Weight: 6.8 mg (typ.)
V
mA
Unit
V
V
V
mA
1
2007-11-01