MIG75J201H Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – TOSHIBA Intelligent Power Module Silicon N Channel IGBT

b. Brake Stage
Characteristic
Collector cut-off current
Collector-emitter saturation voltage
Reverse current
Forward voltage
Switching time
MIG75J201H
Symbol
Test Condition
Min Typ. Max Unit
I_CEX
V_CE = 600V
T_j = 25°C
T_j = 125°C
―
―
1
mA
―
―
20
V_{CE (sat)}
V_D = 15 V, I_C = 30 A
V_IN = 15 V → 0 V
T_j = 25°C
T_j = 125°C
―
1.7
2.7
V
―
1.6
―
I_R
V_R = 600 V
T_j = 25°C
T_j = 125°C
―
―
1
mA
―
―
20
V_F
I_F = 30A
―
2.0
2.5
V
t_on
V_CC = 300 V, I_C = 30 A
―
0.9
2.0
t_off
V_D = 15 V, V_IN = 15 V
0V
Inductive load
―
1.7
3.0
µs
t_f
― 0.25 0.5
(Note 1)
t_rr
― 0.15 0.3
c. Control Stage (T_j = 25°C)
Characteristic
Symbol
Control circuit
current
High side
Low side
Input-on signal voltage
Input-off signal voltage
Fault output
current
Protection
Normal
Over current
protection
trip level
Inverter
Brake
Short circuit
protection
trip level
Inverter
Brake
Over current cut-off time
Over
temperature
protection
Trip level
Reset level
Control supply
under voltage
protection
Trip level
Reset level
Fault output pulse width
I_{D (H)}
I_{D (L)}
V_{IN (on)}
V_{IN (off)}
I_{FO (on)}
I_{FO (off)}
OC
SC
t_{off (OC)}
OT
OTr
UV
UVr
t_FO
Test Condition
V_D = 15 V
V_D = 15 V, I_C = 75 mA
V_D = 15 V, I_C = 75 mA
V_D = 15 V
V_D = 15 V, T_j = 125°C
V_D = 15 V, T_j = 125°C
V_D = 15 V
Case temperature
―
V_D = 15 V
Min Typ. Max Unit
―
8
―
mA
―
32
―
1.3
1.5
1.7
V
2.2
2.5
2.8
V
8
10
12
mA
―
―
1
105 150
―
A
40
―
―
157 225
―
A
60
―
―
―
5
―
µs
110 118 125
°C
―
98
―
11.0 12.0 12.5
V
― 12.5 ―
1
2
3
ms
3
2001-05-29