MIG75J201H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG75J201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J201H
High Power Switching Applications
Motor Control Applications
l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current,
under-voltage & over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT
: VCE (sat) = 2.5 V (Max)
toff = 3.0 µs (Max)
trr = 0.30 µs (Max)
l Package dimensions : TOSHIBA 2-110A1A
l Weight : 520 g
Equivalent Circuit
1
2001-05-29