MG200Q2YS60A Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – High Power Switching Applications Motor Control Applications

Maximum Ratings (Ta = 25°C)
Stage
Inverter
Control
Module
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Forward current
DC
1 ms
Collector power dissipation (Tc = 25°C)
Control voltage (OT)
Fault input voltage
Fault input current
Junction temperature
Storage temperature range
Operation temperature range
Isolation voltage
Screw torque
MG200Q2YS60A
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
V_D
VF_O
IF_O
T_j
T_stg
T_ope
V_isol
¾
Rating
Unit
1200
±20
200
400
200
400
2000
20
20
20
150
-40~125
-20~100
2500 (AC 1 min)
3 (M5)
V
V
A
A
W
V
V
mA
°C
°C
°C
V
Nï½¥m
Electrical Characteristics (T_j = 25°C)
1. Inverter Stage
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Switching time Turn-off time
Fall time
Reverse recovery time
Forward voltage
I_GES
I_CES
V_GE = ±20 V, V_CE = 0
V_GE = +10 V, V_CE = 0
V_CE = 1200 V, V_GE = 0
¾
¾ +3/-4 mA
¾
¾ 100 nA
¾
¾
1.0 mA
V_{GE (off)} V_CE = 5 V, I_C = 200 mA
6.0 7.0 8.0
V
V_{CE (sat)}
V_GE = 15 V,
I_C = 200 A
Tj = 25°C
Tj = 125°C
¾
2.4
2.8
V
¾
¾
3.2
C_ies
V_CE = 10 V, V_GE = 0, f = 1 MHz
¾ 15000 ¾
pF
t_{d (on)}
0.10 ¾ 1.00
t_off
V_CC = 600 V, I_C = 200 A
¾
¾ 2.00
V_GE = ±15 V, R_G = 10 W
ms
t_f
(Note 1) ¾
¾ 0.50
t_rr
¾
¾ 0.50
V_F
I_F = 200 A
¾
2.4 2.8
V
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25°C)
Characteristics
Fault output current
Over temperature
Fault output delay time
Symbol
OC
OT
t_{d (Fo)}
Test Condition
V_GE = 15 V
¾
V_CC = 600 V, V_GE = ±15 V
Min Typ. Max Unit
240 ¾
¾
A
100 ¾ 125 °C
¾
¾
8
ms
3
2001-08-28