MG200Q2YS60A Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Power Switching Applications Motor Control Applications

MG200Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS60A (1200V/200A 2in1)
High Power Switching Applications
Motor Control Applications
· Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
· The electrodes are isolated from case.
· Low thermal resistance
· VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
ï¼£1
5
6
F_O
7
E1/C2
4
OT
1
2
F_O
3
E2
Signal terminal
1. G (L) 2. F_O (L) 3. E (L) 4.
V_D
5. G (H) 6. F_O (H) 7. E (H) 8. Open
1
2001-08-28