CRS12_13 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Diode

10
Pulse test
i_F – v_F
Tj = 150°C
1
125°C
75°C
0.1
25°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage vF (V)
CRS12
P_{F (AV)} – I_{F (AV)}
0.8
DC
0.7
0.6
180°
120°
0.5
0.4
α = 60°
0.3
Rectangular
waveform
0.2
0° α 360°
0.1
Conduction angle α
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
Tℓ max – I_{F (AV)}
160
140
120
100
α = 60°
120°
180°
DC
80
Rectangular
waveform
60
40 _{0° α 360°}
IF _(AV)
20 Conduction
angle α
VR = 30 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
Ta max – IF (AV)
160
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
140
Soldering land: 2 mm × 2 mm
board thickness: 0.64 t
120
100
80
Rectangular
waveform
α = 60°
60
120° 180°
DC
40 _{0° α 360°}
IF _(AV)
20 Conduction
angle α
VR = 30 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
1000
300
100
30
10
3
1
0.001
r_{th (j-a)} – t
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 1.2 mm × 1.2 mm
board thickness: 1.6 t
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 t
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: 2.0 mm × 2.0 mm
board thickness: 0.64 t
0.01
0.1
1
10
Time t (s)
100
1000
3
2013-11-01