CRS12_13 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Diode

TOSHIBA Schottky Barrier Diode
CRS12
CRS12
Switching Mode Power Supply Applications
(Output voltage: ≤12 V)
DC/DC Converter Applications
• Forward voltage: V_FM = 0.58 V (max)
• Average forward current: I_{F (AV)} = 1.0 A
• Repetitive peak reverse voltage: V_RRM = 60 V
• Suitable for compact assembly due to small surface-mount package
“S−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature range
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
60
V
1.0 (Note 1) A
20 (50 Hz)
A
−40~150
°C
−40~150
°C
Note 1:
Note 2:
Ta = 73°C
Device mounted on a ceramic board
JEDEC
―
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
JEITA
―
Board thickness: 0.64 t
Rectangular waveform (α = 180°), V_R = 30 V
Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
V_{FM (1)}
V_{FM (2)}
I_{RRM (1)}
I_{RRM (2)}
C_j
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
I_FM = 0.7 A (pulse test)
I_FM = 1.0 A (pulse test)
V_RRM = 5 V (pulse test)
V_RRM = 60 V (pulse test)
V_R = 10 V, f = 1.0 MHz
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 1.2 mm × 1.2 mm)
(board thickness: 1.6 t)
⎯
Min Typ. Max Unit
⎯ 0.48 ⎯
V
⎯ 0.52 0.58
⎯
0.4
⎯
μA
⎯
4.0 100
⎯
40
⎯
pF
⎯
⎯
70
⎯
⎯
140 °C/W
⎯
⎯
240
⎯
⎯
20 °C/W
Start of commercial production
2002-12
1
2013-11-01