CRS09_13 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

i_F – v_F
10
3
Tj = 150°C
1
125°C
75°C
0.3
0.1
25°C
0.03
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous forward voltage vF (V)
Ta MAX – I_{F (AV)}
Ceramic substrate (substrate size 50 mm × 50 mm)
160
140
120
100
80
α = 60°
Rectangular
60 waveform
120°
180° DC
40
0° α 360°
20
IF _(AV)
Conduction angle α
VR = 15 V
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Average forward current IF _(AV) (A)
CRS09
P_{F (AV)} – I_{F (AV)}
0.8
DC
0.7
180°
0.6
120°
0.5
0.4
α = 60°
0.3
Rectangular
waveform
0.2
0° α 360°
0.1
Conduction angle α
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Average forward current IF _(AV) (A)
Tℓ max – I_{F (AV)}
160
140
120
100
80
α = 60°
Rectangular
60 _waveform
120°
180° DC
40
0° α 360°
20
IF _(AV)
Conduction angle α
0
VR = 15 V
0
0.4
0.8
1.2
1.6
2.0
2.4
Average forward current IF _(AV) (A)
r_{th (j-a)} – t
30000
① Device mounted on a ceramic board:
10000 ^{Soldering land: 2 mm × 2 mm}
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm × 6 mm
1000
②
100
①
10
1
1
10
100
1000
10000 100000
Time t (ms)
3
2013-11-01