CRS09_13 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS09
CRS09
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Unit: mm
• Forward voltage: V_FM = 0.46 V (max)
• Average forward current: I_{F (AV)} = 1.5 A
• Repetitive peak reverse voltage: V_RRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“S−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
30
V
Average forward current
I_{F (AV)}
1.5 (Note 1) A
Peak one cycle surge forward current
(non-repetitive)
I_FSM
30 (50 Hz)
A
Junction temperature
T_j
−40~150
°C
Storage temperature
T_stg
−40~150
°C
JEDEC
―
Note 1:
Note 2:
Ta = 84°C
JEITA
―
Device mounted on a ceramic board
(board size: 50 mm × 50 mm, land size: 2 mm × 2 mm)
Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_{RRM (1)}
I_{RRM (2)}
C_j
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
Min Typ. Max Unit
I_FM = 0.1 A
⎯ 0.35 ⎯
I_FM = 1.0 A
⎯ 0.415 ⎯
V
I_FM = 1.5 A
⎯ 0.43 0.46
V_RRM = 5 V
V_RRM = 30 V
⎯
0.8
⎯
μA
⎯
10
50
V_R = 10 V, f = 1.0 MHz
⎯
90
⎯
pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
⎯
Device mounted on a glass-epoxy
board
⎯
(soldering land: 6 mm × 6 mm)
⎯
70
°C/W
⎯
140
⎯
⎯
⎯
20 °C/W
Start of commercial production
2000-04
1
2013-11-01