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CRS03_14 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type | |||
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iF â vF
10
Tj = 150°C
1
125°C
75°C
25°C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage VF (V)
Ta max â IF (AV)
Ceramic substrate (substrate size: 50 mm à 50 mm)
160
140
120
100
α = 60°
80 Rectangular
waveform
60
120°
180°
DC
40 0° α 360°
20
IF (AV)
Conduction
angle α
0 VR = 15 V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current IF (AV) (A)
CRS03
PF (AV) â IF (AV)
0.6
0.5
0.4
0.3
α = 60°
0.2
DC
180°
120°
Rectangular
waveform
0.1
0° α 360°
Conduction angle α
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current IF (AV) (A)
Ta max â I F (AV)
Glass-epoxy substrate (substrate size:
50 mm à 50 mm, soldering land: 6 mm à 6 mm)
160
Rectangular waveform
140
IF (AV)
120
0° α 360°
VR = 15 V
100
Conduction angle α
80
60
40
α = 60° 120°
180° DC
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current IF (AV) (A)
Tâ max â IF (AV)
160
140
120
100
α = 60° 120°
180° DC
80 Rectangular
waveform
60
40 0° α 360°
20 ConductioInF (AV)
angle α
0
VR = 15 V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current IF (AV) (A)
rth (j-a) â t
10000
â Device mounted on a ceramic board:
Soldering land: 2 mm à 2 mm
â¡ Device mounted on a glass-epoxy board:
1000 Soldering land: 6 mm à 6 mm
100
â¡
â
10
1
0.001
0.01
0.1
1
10
100
Time t (s)
3
2014-07-09
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