CRS03_14 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS03
CRS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Low forward voltage: VFM = 0.45 V (max) @ IFM = 0.7 A
• Average forward current: IF (AV) = 1.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“S−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
30
V
Average forward current
I_{F (AV)}
1.0 (Note 1) A
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
I_FSM
T_j
T_stg
20 (50 Hz)
A
−40 to 150
°C
−40 to 150
°C
① ANODE
② CATHODE
Note 1: Ta = 61°C
JEDEC
―
Device mounted on a glass-epoxy board
JEITA
―
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
Rectangular waveform (α = 180°), V_R = 15 V
TOSHIBA
3-2A1S
Note 2: Using continuously under heavy loads (e.g. the application of high
Weight: 0.013 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_{RRM (1)}
I_{RRM (2)}
C_j
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
Min Typ. Max Unit
I_FM = 0.1 A
I_FM = 0.7 A
I_FM = 1.0 A
 0.33 
 0.425 0.45
V
 0.45 
V_RRM = 5 V

V_RRM = 30 V

V_R = 10 V, f = 1.0 MHz

Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)

Device mounted on a glass-epoxy
board

(soldering land: 6 mm × 6 mm)
0.5

µA

100
40

pF

70
°C/W

140



20 °C/W
Start of commercial production
1998-06
1
2014-07-09