2SK3767 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator Applications

I_D – V_DS
2
5.5
10
6
5.25
1.6
1.2
5
0.8
4.75
4.5
0.4
Common source
VGS = 4V
Tc = 25°C
Pulse test
0
0
4
8
12
16
20
24
Drain-source voltage V_DS (V)
2SK3767
I_D – V_DS
4
Common source
Tc = 25°C
Pulse test
10
6
3
5.5
2
5.25
5
1
4.75
4.5
VGS = 4V
0
0
4
8
12
16
20
24
Drain-source voltage V_DS (V)
5
Common source
4 ^{VDS = 20 V}
Pulse test
I_D – V_GS
3
2
−55
Tc=100℃
1
25
0
0
2
4
6
8
10
Gate-source voltage V_GS (V)
V_DS – V_GS
20
Common source
Tc = 25℃
16
Pulse test
12
8
ID = 2A
4
1
0.5
0
0
4
8
12
16
20
Gate－source voltage V_GS (V)
⎪Y_fs⎪ – I_D
10
1
0.1
0.01
0.01
Tc = −55°C
100
25
Common source
VDS = 20 V
Pulse test
0.1
1
10
Drain current I_D (A)
R_{DS (ON)} – I_D
100
Common source
Tc = 25°C
Pulse test
10
VGS=10V
1
0.01
0.1
1
10
Drain current I_D (A)
3
2004-12-10