2SK3767 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator Applications

2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.6S (typ.)
• Low leakage current: IDSS = 100μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
600
V
±30
V
2
A
5
25
W
93
mJ
2
A
4
mJ
150
°C
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
5.0
°C/W
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V_DD = 90 V, T_ch = 25°C（initial））, L = 41mH, R_G = 25 Ω , I_AR = 2 A
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2004-12-10