2SC6126 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications

I_C – V_CE
3
100
70
50
30
2
20
10
1
5
IB=2ｍA
Common emitter
Ta=25℃
0
Single nonrepetitive pulse
0
0.2
0.4
0.6
0.8
1
Collector-emitter voltage V_CE (V)
2SC6126
1000
100
hFE－Ic
Ta=100℃
25℃
−55℃
10
Common emitter
VCE = 2 V
1 ^{Single nonrepetitive pulse}
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{CE (sat)} – I_C
10
Common emitter
IC/IB = 30
Single nonrepetitive pulse
1.0
25℃
0.1
Ta=100℃
−55℃
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
I_C – V_BE
3
Common emitter
VCE = 2 V
Single nonrepetitive pulse
2
Ta=100℃
25℃
1
−55℃
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
3
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 30
Single nonrepetitive pulse
3
−55℃
1
Ta=100℃
0.3
25℃
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
Safe operating area
10
IC max (pulse) *
IC max (continuous)*
100μs*
1
10 s*
100 ms*
1 ms*
10 ms*
DC operation
Ta = 25°C
0.1
*: Single nonrepetitive pulse Ta = 25°C
Note that the curves for 100 ms, 10 s and DC
operation will be different when the devices
aren’t mounted on an FR4 board (glass-epoxy,
1.6 mm thick, Cu area: 645 mm²).
These characteristic curves must be derated
linearly with increase in temperature.
0.01
0.1
1
10
100
Collector−emitter voltage V_CE (V)
2009-07-07